InAs (Indium Arsenide) of III-V group compound is a single crystal made by LEC method.
Wafer substrate is thinly sliced from single crystal ingot,then polished to epi-ready. InAs can be used in different wide areas such like measurement and analysis as infrared detector element by performing epitaxial layer to wafer substrate.
Wafer substrate is thinly sliced from single crystal ingot,then polished to epi-ready. InAs can be used in different wide areas such like measurement and analysis as infrared detector element by performing epitaxial layer to wafer substrate.