GaP (Gallium Phosphide) is a orange-yellow semi-translucent material, which is made by direct reaction of galliium and phosphide or reaction by oxide gallium and phosphide at temperature of 900~1000C. Specific gravity is 4.13,melt point is 1465C, dielectric constant is 9.1,energy range is 2.2eV. GaP has the semiconductor charecteristics as other III-V compounds materials therefore can be used for display elements of various visible light emmition diode as well as illumination (yellow and green) of mobile phone.



  • Type/Dopant – N-type/S,Si,P-type/Zn Un-doped also available
  • Diameter2inch ~ 3inch
  • Orientation(100), (111), (110) Other special orientation or off angle also available.
  • FinishingSingle side mirror polished, Double sides mirror polished, as-cut
  • Thickness250-1000um Thickness(1-10)E18cm-3
  • EPD<1E5cm-2

10 in stock

SKU: NBD-UK413C Category: Tags: , , ,