Indium Phosphide(InP) is the compound of Indium and Phosphide. Compared with GaAs or GaP,InP single crystal substrate has larger lattice constant,therefore it is possible to grow epitaxial like InGaAs,AlInAs,InGaAsP and AlGAINAs etc by matching the lattice on substrate(unifying lattice constant). By combining these materials,it’s possible to produce light-receiving and emitting device for light communication, super-fast transistor and resonance tunneling diode.


  • Growth: LEC
  • Type/Dopant – N-type/S・Sn・Un-doped, P-type/Zn, Semi-Insulating/Fe
  • Diameter – 2inch
  • Orientation(100)・(110)・(111)~(611)
    For other orientation and off-orientation,please ask us.
  • Finishing – Single side mirror polished, Double sides mirror polished, Epi-ready. For other treatment,please ask us.
  • Thickness2inch: 350or500um,
    For other thickness,please ask us.
  • Others – For career concentration, resistivity, mobility, it can be specified within the allowable range.

10 in stock

SKU: NBD-UK12B Category: Tags: , ,