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Gallium Antimondide (GaSb) is a single crystal grown by special LEC method,used in infrared detector,LED,laser,transistor and thermostat photovoltaic system etc.
As typified by GaSb, III-V group compound semicoductors are direct transition semiconductor,the bandgap of which is smaller than Si semiconductor, it can also tranfer the electromagnetic wave (length of 0.8um ~2.2um) in near-infrared area to electricity.
Technically,solar cell based on GaSb is very difficult however research on II-VI group epi by MBE to GaSb substrate is now under study.