NBD-UK12D InAs

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  • £3,870.00
  • Regular price £4,500.00


InAs (Indium Arsenide) of III-V group compound is a single crystal made by LEC method.
Wafer substrate is thinly sliced from single crystal ingot,then polished to epi-ready. InAs can be used in different wide areas such like measurement and analysis as infrared detector element by performing epitaxial layer to wafer substrate.